At present, with the continuous shrinking of semiconductor technology, advanced integrated circuit devices have been transformed from planar to three-dimensional structures, and integrated circuit manufacturing processes are becoming more and more complex, often requiring hundreds or even thousands of process steps. For the manufacture of advanced semiconductor devices, after each process, there will be more or less particle contamination, metal residues or organic residues on the surface of the silicon wafer. The continuous reduction of device feature size and the increasing complexity of three-dimensional device structures make semiconductor Devices are increasingly sensitive to particle contamination, impurity concentration and quantity. Higher requirements are put forward for the cleaning technology of polluted particles on the mask surface of silicon wafers.
The key point is to overcome the great adsorption force between the polluted particles and the substrate. Traditional chemical cleaning, mechanical cleaning, ultrasonic cleaning None of the methods can meet the needs, and laser cleaning machine can easily solve such pollution problems.
In addition, as the size of integrated circuit devices continues to shrink, material loss and surface roughness during the cleaning process have become issues that must be paid attention to. It is the most basic requirement to remove particles without material loss and pattern damage. Contact, no thermal effect, no surface damage to the object to be cleaned, and no secondary pollution and other incomparable advantages of traditional cleaning methods, it is a cleaning method to solve the pollution of semiconductor devices.